J. Chen, Hamann, D. M., Choi, D. S., Poudel, N., Shen, L., Shi, L., Johnson, D. C., and Cronin, S. B., “
Enhanced Cross-plane Thermoelectric Transport of Rotationally-disordered SnSe2 via Se Vapor Annealing,”
Nano Letters, vol. 18, no. 11, pp. 6876–6881, 2018.
Publisher's Version J. Chen, Kim, J., Poudel, N., Hou, B., Shen, L., Shi, H., Shi, L., and Cronin, S., “
Enhanced thermoelectric efficiency in topological insulator Bi2Te3 nanoplates via atomic layer deposition-based surface passivation,”
Applied Physics Letters, vol. 113, pp. 083904, 2018.
Publisher's Version F. Tian, Song, B., Chen, X., Ravichandran, N. K., Lv, Y., Chen, K., Sullivan, S., Kim, J., Zhou, Y., Liu, T. - H., Goni, M., Ding, Z., Sun, J., Gamage, G. A. G. U., Sun, H., Ziyaee, H., Huyan, S., Deng, L., Zhou, J., Schmidt, A. J., Chen, S., Chu, C. - W., Huang, P. Y., Broido, D., Shi, L., Chen, G., and Ren, Z., “
Unusual high thermal conductivity in boron arsenide bulk crystals,”
Science, vol. 361, pp. 582–585, 2018.
Publisher's VersionAbstractConventional theory predicts that ultrahigh lattice thermal conductivity can only occur in crystals composed of strongly bonded light elements, and that it is limited by anharmonic three-phonon processes. We report experimental evidence that departs from these long-held criteria. We measured a local room-temperature thermal conductivity exceeding 1000 watts per meter-kelvin and an average bulk value reaching 900 watts per meter-kelvin in bulk boron arsenide (BAs) crystals, where boron and arsenic are light and heavy elements, respectively. The high values are consistent with a proposal for phonon-band engineering and can only be explained by higher-order phonon processes. These findings yield insight into the physics of heat conduction in solids and show BAs to be the only known semiconductor with ultrahigh thermal conductivity.
J. Xing, Chen, X., Zhou, Y., Culbertson, J. C., Freitas, J. A., Glaser, E. R., Zhou, J., Shi, L., and Ni, N., “
Multimillimeter-sized cubic boron arsenide grown by chemical vapor transport via a tellurium tetraiodide transport agent,”
Applied Physics Letters, vol. 112, pp. 261901, 2018.
Publisher's Version D. S. Choi, Poudel, N., Park, S., Akinwande, D., Cronin, S. B., Watanabe, K., Taniguchi, T., Yao, Z., and Shi, L., “
Large Reduction of Hot Spot Temperature in Graphene Electronic Devices with Heat-Spreading Hexagonal Boron Nitride,”
ACS Applied Materials & Interfaces, vol. 10 , pp. 11101–11107, 2018.
Publisher's Version J. Kim, Fleming, E., Zhou, Y., and Shi, L., “
Comparison of four-probe thermal and thermoelectric transport measurements of thin films and nanostructures with microfabricated electro-thermal transducers,”
Journal of Physics D: Applied Physics, vol. 51, pp. 103002, 2018.
Publisher's Version