Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition

Citation:

W. W. Cai, Moore, A. L., Zhu, Y., Li, X., Chen, S., Shi, L., and Ruoff, R. S., “Thermal Transport in Suspended and Supported Monolayer Graphene Grown by Chemical Vapor Deposition,” Nano Letters, vol. 10, no. 5, pp. 1645-1651, 2010.

Abstract:

Graphene monolayer has been grown by chemical vapor deposition on copper and then suspended over a hole. By measuring the laser heating and monitoring the Raman G peak, we obtain room-temperature thermal conductivity and interface conductance of (370 + 650/−320) W/m K and (28 + 16/−9.2) MW/m2 K for the supported graphene. The thermal conductivity of the suspended graphene exceeds (2500 + 1100/−1050) W/m K near 350 K and becomes (1400 + 500/−480) W/m K at about 500 K.

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