In-Plane Thermal and Thermoelectric Properties of Misfit-Layered [(PbSe)0.99]x(WSe2)x Superlattice Thin Films

Citation:

A. Mavrokefalos, Lin, Q., Beekma, M., Seol, J. H., Lee, Y. J., Kong, H. J., Pettes, M. T., Johnson, D. C., and L. Shi, “In-Plane Thermal and Thermoelectric Properties of Misfit-Layered [(PbSe)0.99]x(WSe2)x Superlattice Thin Films,” Applied Physics Letters, vol. 96., pp. 181908, 2010.

Abstract:

The in-plane thermal conductivity is measured to be three times lower in misfit-layered [(PbSe)0.99]x(WSe2)xsuperlatticethin films than disordered-layered WSe2 because of interface scattering despite a higher cross-plane value in the former than the latter. While having little effect on the in-plane thermal conductivity,annealing the p-type [(PbSe)0.99]2(WSe2)2films in Se increases the in-plane Seebeck coefficient and electrical conductivity because of decreased defect and hole concentrations. Increasing interface density of the annealedfilms by decreasing x from 4 to 2 has weak influence on the in-plane thermal conductivity but increases the Seebeck coefficient and decreases the room-temperature electrical conductivity.

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