Gate Tunable Relativistic Mass and Berry's phase in Topological Insulator Nanoribbon Field Effect Devices

Citation:

L. A. Jauregui, Pettes, M. T., Rokhinson, L. P., Shi, L., and Chen, Y. P., “Gate Tunable Relativistic Mass and Berry's phase in Topological Insulator Nanoribbon Field Effect Devices,” Sci. Rep., vol. 5, pp. 8452, 2015.

Abstract:

Notes:

Publisher's Version