Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2

Citation:

M. Kayyalha, Maassen, J., Lundstrom, M., Shi, L., and Chen, Y. P., “Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2,” Journal of Applied Physics, vol. 120, pp. 134305, 2016.

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Publisher's Version